DICOMO 2008 Excellent Presentation Awards
Winner: Hiroshi Watanabe, NTT Cyber Solutions Laboratories
Date: July 11, 2008
Organization: IPSJ Multimedia, Distributed, Cooperative and Mobile Symposium (DICOMO)
For “An Experiment on User Generated ID Method in CompassMark as an Information Guide System with Floor Signs” (in Japanese).
User generated ID (UGID) is an information design method for tying digital content to the real world simply. We enhanced CompassMark as an information guide system with floor signs and built in the UGID function. This paper clarifies the effectiveness of the UGID method through an experiment in Akihabara with the enhanced CompassMark system.
The 9th International Conference on Web Information Systems Engineering (WISE 2008) Kambayashi Best Paper Award
Winner: Masaya Murata, Hiroyuki Toda, Yumiko Matsuura, and Ryoji Kataoka, NTT Cyber Solutions Laboratories
Date: September 2, 2008
Organization: The WISE Program Committee
For “Improving Mobile Web-IR Using Access Concentration Sites in Search Results.”
This paper proposes a method of improving mobile Web-IR (information retrieval) by using click logs of a search service site. This method first identifies the access-concentrated sites among many search results based on the click logs. Then, query expansion with terms extracted from those access-concentrated sites is performed.
The 14th Sakaki Incentive Award
Winner: Hiroki Hibino, NTT Basic Research Laboratories
Date: September 16, 2008
Organization: The 141th Committee on Microbeam Analysis of Japan Society for the Promotion of Science
For “Dynamical Observation of Crystal Growth and Surface Phase Transition by Low-energy Electron Microscopy” (in Japanese).
Papers Published in Technical Journals and Conferences
Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, and H. Yamaguchi
IEICE Technical Report, ED2008-62, SDM2008-81, pp. 119–124, 2008.
An electrometer based on field-effect transistors was fabricated on a silicon-on-insulator substrate. The electrometer has a nanometer-scale channel and a capacitively coupled node, where single electrons are stored. We discuss the dependence of the charge sensitivity of the electrometer on its structure and on its operating conditions and give guidelines for achieving higher charge sensitivity. The device optimization based on this dependence allows the room-temperature demonstration of the electrometer with extremely high charge sensitivity of 0.0013 e/√Hz at 1 Hz.
High-pressure and high-temperature annealing of diamond ion-implanted with various elements
K. Ueda and M. Kasu
Diamond and Related Materials, Elsevier, Vol. 17, No. 7-10, pp. 1269–1272, 2008.
We tried to dope various ions (B, Al, Ga, Mg, and Be) into diamond films by combining ion-implantation with high-pressure and high-temperature annealing. In cathodoluminescence spectra of Be-implanted films, previously unreported emissions appeared at 4.843, 4.687, and 4.533 eV. These emissions were only observed from Be-implanted films, and they were not observed from B-, Al-, Ga-, and Mg-implanted ones. The 4.843-eV line is assigned to the zero phonon line, and the 4.687- and 4.533-eV lines are its phonon replicas because the energy difference between peaks is close to the optical phonon energy of diamond (∼0.15 eV). The temperature dependence of the 4.843-eV line is similar to that of bound excitons.
Novel signed chromatic dispersion monitoring technique based on asymmetric waveform distortion in DQPSK receiver